Association Mission
The mission of the association is to advance the creation, communication and application of knowledge to benefit society and improve people's lives.
Legal Members
Membership
Contact Us
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Hosseinifar M, Ahmadi V, Ebnali-Heidari M. High Efficiency Slotted Microring Si-Photodetector Based on Internal Photoemission Effect . ICOP & ICPET _ INPC _ ICOFS 2015; 21 :1583-1586
URL: http://opsi.ir/article-1-813-en.html
URL: http://opsi.ir/article-1-813-en.html
Abstract: (3225 Views)
Abstract- In this paper we propose an ultracompact integrated slotted-microring-internal photoemission effect photodetector (S-MR-IPE-PD) at the telecommunication wavelength of 1550 nm. The S-MR-IPE-PD is comprised of a nanometer-wide air slot over a Schottky barrier on CMOS-compatible microring resonator (MRR). The photon absorption is due to the IPE over a Schottky barrier at the metal/silicide -Si interface. Including the essential features of slot-waveguides and MR-based PDs, we can achieve excellent high-optical intensity, high speed and high quantum efficiency characteristics simultaneously. Photoresponse characteristics of S-MR-IPE-PDs which depend on device parameters and coupling conditions are investigated. The important features of the device, such as optical mode enhancement, efficiency enhancement and wavelength selectivity are discussed. Our numerical results prove that by using this PD, the low quantum efficiency, characterizing the devices based on the IPE can be enhanced efficiently. Additionally we show that by use of such a structure the optical field can be confined in a 30-nm wide air slot with enhanced optical mode.
Send email to the article author
| Rights and permissions | |
 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. |
