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URL: http://opsi.ir/article-1-2448-en.html
2- Department of Physics, Farhangian University, Tehran, Iran
Vapor deposition method was used for the simulation of MoS2 nano structures by COMSOL Multiphysics. Optimum simulation time has been achieved by a two-dimensional axisymmetric geometry. In this work, the thickness of MoS2 thin films was measured in the different pressures, and the optimum Ar pressure for monolayer MoS2 in the constant temperature has been determined. Growth rate has been obtained on the chamber walls and on the substrate. Also, Incident molecular flux for the optimum pressure have been computed on the substrate. These thin films have enormous potentials in the next generation of nanoelectronic and optoelectronic devices.
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