Optics and Photonics Society of Iran

High power semiconductor laser modulation is of great practical importance. Extensive research has been done to produce high energy short pulses. In this study by using an asymmetric structure, the optical field is shifted to n-section and the internal loss of the laser is reduced. This reduction in loss, and also applying high refractive index layers in n-section and increasing photon lifetime, makes it possible to use the gain switching method to generate several picoseconds optical pulses in edge emitting lasers. In this study, by investigating the appropriate pulse function, the maximum current limit is investigated and finally a short pulse of 80 ps (FWHM) and optical power of 3.2 W is created.