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Volume 26 - ICOP & ICPET 2020
ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 1005-1008 |
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Sepahban Shahgoli S, Akhtariyan far S F, Shojaei S. Engineering of Schottky Barrier Height in Graphene -Transition Metal Dichalgocenide-based Heterostructures. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :1005-1008
URL: http://opsi.ir/article-1-2051-en.html
URL: http://opsi.ir/article-1-2051-en.html
1- Research Institute for Applied Physics & Astronomy, University of Tabriz
Abstract: (1755 Views)
Transition metal dichalgocenides are new generated materials which became attractive for nano photonic and nano electronic applications, because of their unique properties. Also 2D materials like grapheme which is guasi metal, if combined with to 2D semiconductors, make vanderwaals heterostructures which have unpredictable behaviour. In our paper, we theoretically study heterostructure based on graphene and tungsten disulfide that their contact make schottky barrier height. We reduced SBH from to electron volt by applying external field that results in increasing reverse saturation current from to ampere. Therefore the enhancement of thermionic current, enables the capability of using these structures in detectors for increasing photoresponse and gain.
Keywords: Graphene, heterostructure, schottky barrier, transition metal dichalgocenide, two dimensional materials.
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