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year 27, Issue 1 (Iranian Nano-Photonic Conference 2020 2020)
ICOP & ICPET _ INPC _ ICOFS 2020, 27(1): 118-120 |
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Jafari A, Ranjkesh A, Razmand R, Manavizadeh N. Efficiency improvement of the GaInP/GaAs multi junction photovoltaic modules. ICOP & ICPET _ INPC _ ICOFS 2020; 27 (1) :118-120
URL: http://opsi.ir/article-1-2272-en.html
URL: http://opsi.ir/article-1-2272-en.html
1- Electronic Materials Laboratory, Electrical Engineering Department, K. N. Toosi University of Technology, Tehran, Iran
2- Nanostructures Lab, Electrical Engineering Department, K. N. Toosi University of Technology, Tehran, Iran
2- Nanostructures Lab, Electrical Engineering Department, K. N. Toosi University of Technology, Tehran, Iran
Abstract: (1373 Views)
The high efficiency of solar cells due to the use of multi junction as GaAs, has a great impact on increasing the efficiency of these cells and on both fabrication and optimization of their parameters. Higher absorption coefficient in the visible spectrum than Si, GaAs can work with a much thinner wafer, absorbing photons as much as the conventional Si cells. In this paper, GaInP/GaAs dual junction solar cell is optimized using Silvaco simulator software. First, the structure of the primary cell according to the fabrication results on GaAs with specific impurity densities is prepared. Then, through changing the material in the emitter layer and optimizing the impurity density of the base and emitter layers, the improved cell has been simulated. The aim of this work was to improve the performance of the GaInP/GaAs solar cell, applying the changes and optimizing the results showed a 10.87% and 1.35% improvement in efficiency and fill factor with near 1-volt increasement in open circuit voltage.
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